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MT60B1G16HC-56B:G - Micron

Description: This document describes the product specifications that are unique to Micron 16Gb DDR5 Die Revision G device. For general Micron DDR5 SDRAM specifications, see the Micron DDR5 SDRAM Core Product Data Sheet. Content in this 16Gb Die Revision G DDR5 SDRAM data sheet addendum supersedes content defined in the core data sheet. Notes: 1. Not all options listed can be combined to define an offered product. Use the part catalog search on micron.com for available offerings. • VDD = VDDQ = 1.1V (NOM) • VP

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MT60B1G16HC-56B:G - Micron PCB footprint - BGA - BGA - 102-Ball VFBGA – MO-210-AT (x16)
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MT60B1G16HC-56B:G - Micron  - 3D model - BGA - 102-Ball VFBGA – MO-210-AT (x16)
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MT60B1G16HC-56B:G Details

  • Manufacturer Part Number:

    MT60B1G16HC-56B:G

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    FBGA-102

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.36

  • Manufacturer:

    Micron Technology Inc

  • YTEOL:

    0

  • Access Mode:

    MULTI BANK PAGE BURST

  • Access Time-Max:

    16 ns

  • Clock Frequency-Max (fCLK):

    2801 MHz

  • I/O Type:

    COMMON

  • JESD-30 Code:

    R-PBGA-B102

  • JESD-609 Code:

    e1

  • Length:

    14 mm

  • Memory Density:

    17179869184 bit

  • Memory IC Type:

    DDR5 DRAM

  • Memory Width:

    16

  • Number of Functions:

    1

  • Number of Ports:

    1

  • Number of Terminals:

    102

  • Number of Words:

    1073741824 words

  • Number of Words Code:

    1000000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    95 °C

  • Organization:

    1GX16

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    VFBGA

  • Package Equivalence Code:

    BGA102,9X17,32

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, VERY THIN PROFILE, FINE PITCH

  • Refresh Cycles:

    8192

  • Seated Height-Max:

    1 mm

  • Self Refresh:

    YES

  • Standby Current-Max:

    0.008 A

  • Supply Current-Max:

    0.821 mA

  • Supply Voltage-Max (Vsup):

    1.17 V

  • Supply Voltage-Min (Vsup):

    1.06 V

  • Supply Voltage-Nom (Vsup):

    1.1 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Terminal Finish:

    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

  • Terminal Form:

    BALL

  • Terminal Pitch:

    0.8 mm

  • Terminal Position:

    BOTTOM

  • Width:

    9 mm

MT60B1G16HC-56B:G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the MT60B1G16HC-56B:G is 0°C to 85°C, with a maximum storage temperature range of -40°C to 100°C.
  • To ensure signal integrity and reduce noise on the memory bus, it's recommended to follow proper PCB design guidelines, use differential signaling, and implement signal termination and filtering techniques. Additionally, ensure that the memory module is properly seated and connected to the motherboard.
  • The recommended refresh rate for the MT60B1G16HC-56B:G is 4x per tREFI (Refresh Interval) = 3.9 μs, which translates to a refresh rate of 1,024 cycles per 64 ms.
  • The MT60B1G16HC-56B:G is designed to operate at a voltage supply of 1.2V ± 0.06V. Using a different voltage supply may affect the module's performance, reliability, and lifespan. It's recommended to use the specified voltage supply to ensure optimal operation.
  • The MT60B1G16HC-56B:G supports error detection and correction mechanisms, such as ECC (Error-Correcting Code) and CRC (Cyclic Redundancy Check). Implementing these mechanisms in your system design can help detect and correct errors during memory access.

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MT60B1G16HC-56B:G Overview

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