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MUN2212T1G - onsemi

Description: Reduces Board Space; Reduces Component Count; Simplifies Circuit Design; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

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PCB Footprints
MUN2212T1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SC-59 CASE 318D-04
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3D Models
MUN2212T1G - onsemi  - 3D model - SOT23 (3-Pin) - SC-59 CASE 318D-04
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MUN2212T1G Details

  • Manufacturer Part Number:

    MUN2212T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-59 3 LEAD

  • Pin Count:

    3

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    BUILT-IN BIAS RESISTOR RATIO IS 1

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    60

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.338 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MUN2212T1G Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to have a solid copper plane on the bottom layer of the PCB, connected to the thermal pad of the MUN2212T1G. This helps to dissipate heat efficiently. Additionally, it's recommended to have a minimum of 2 oz copper thickness and to avoid having any thermal vias or holes under the device.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions and derating guidelines provided in the datasheet. Additionally, consider using a heat sink or thermal interface material to reduce the junction temperature. It's also crucial to ensure good airflow and to avoid any thermal hotspots on the PCB.
  • Although the datasheet doesn't explicitly state the maximum allowed voltage on the gate pin, it's generally recommended to keep the gate voltage between -2V and Vcc + 2V to prevent damage to the device. Exceeding these limits can cause permanent damage or affect the device's reliability.
  • Yes, the MUN2212T1G is suitable for high-frequency switching applications. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and to ensure that the PCB layout is optimized for high-frequency operation. Additionally, consider using a gate driver with a low output impedance to minimize switching losses.
  • To handle ESD protection for the MUN2212T1G, it's recommended to follow standard ESD handling procedures, such as using an ESD wrist strap or mat, and to ensure that the device is stored in an ESD-protected environment. Additionally, consider adding ESD protection devices, such as TVS diodes, to the PCB design to protect the device from electrostatic discharge.

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MUN2212T1G Overview

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