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MUN5111DW1T1G - onsemi

Description: Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

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PCB Footprints
MUN5111DW1T1G - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - 1.80*1.15
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3D Models
MUN5111DW1T1G - onsemi  - 3D model - SOT23 (6-Pin) - 1.80*1.15
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MUN5111DW1T1G Details

  • Manufacturer Part Number:

    MUN5111DW1T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-88/SC70-6/SOT-363 6 LEAD

  • Pin Count:

    6

  • Manufacturer Package Code:

    419B-02

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    BUILT-IN BIAS RESISTOR RATIO IS 1

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    35

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.15 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MUN5111DW1T1G Frequently Asked Questions (FAQs)

  • A good PCB layout for the MUN5111DW1T1G should include a solid ground plane, wide traces for power and ground, and a thermal relief pattern under the device to facilitate heat dissipation.
  • To ensure reliable operation at high temperatures, ensure that the device is properly heatsinked, and the maximum junction temperature (Tj) is not exceeded. Also, consider derating the device's power handling capabilities at higher temperatures.
  • The MUN5111DW1T1G has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and handling to prevent damage. A human body model (HBM) of 2 kV and a machine model (MM) of 200 V are recommended.
  • Yes, the MUN5111DW1T1G is suitable for high-reliability applications. It's manufactured using a robust process, and onsemi provides a high level of quality control and testing to ensure the device meets stringent reliability requirements.
  • Store the MUN5111DW1T1G in a dry, cool place, away from direct sunlight and moisture. Handle the device by the body, not the leads, and avoid bending or flexing the leads. Use anti-static packaging and follow proper ESD handling procedures.

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MUN5111DW1T1G Overview

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Part Image MUN5111DW1T1 Rochester Electronics LLC

100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 419B-02, SC-70, SC-88, 6 PIN

Part Image MUN5111DW1T1 onsemi

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon