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MUN5113DW1T1G - onsemi

Description: Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

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PCB Footprints
MUN5113DW1T1G - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SOT-363
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3D Models
MUN5113DW1T1G - onsemi  - 3D model - SOT23 (6-Pin) - SOT-363
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MUN5113DW1T1G Details

  • Manufacturer Part Number:

    MUN5113DW1T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-88/SC70-6/SOT-363 6 LEAD

  • Pin Count:

    6

  • Manufacturer Package Code:

    419B-02

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    BUILT-IN BIAS RESISTOR RATIO IS 1

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    80

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.15 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MUN5113DW1T1G Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the MUN5113DW1T1G is 10V to 30V, with a typical voltage of 15V.
  • To ensure proper biasing, connect the base of the transistor to a voltage divider network that provides a stable voltage reference, and ensure the collector-emitter voltage is within the recommended range.
  • The MUN5113DW1T1G can handle a maximum continuous collector current of 1A, and a peak current of 2A for a short duration (less than 100ms).
  • To prevent overheating, ensure the transistor is mounted on a heat sink with a thermal resistance of less than 10°C/W, and provide adequate airflow around the device.
  • The MUN5113DW1T1G can be stored at temperatures between -55°C and 150°C, but it's recommended to store it at room temperature (20°C to 30°C) for optimal performance.

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MUN5113DW1T1G Overview

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Part Image MUN5113DW1T1 onsemi

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