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MUN5113T1G - onsemi

Description: Obsolete - PNP Bipolar Digital Transistor (BRT)

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PCB Footprints
MUN5113T1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SC-70 (SOT-323) CASE419-04
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3D Models
MUN5113T1G - onsemi  - 3D model - SOT23 (3-Pin) - SC-70 (SOT-323) CASE419-04
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MUN5113T1G Details

  • Manufacturer Part Number:

    MUN5113T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SC-70 (SOT-323) 3 LEAD

  • Pin Count:

    3

  • Manufacturer Package Code:

    419-04

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    BUILT-IN BIAS RESISTOR RATIO IS 1

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    80

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.31 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • VCEsat-Max:

    0.25 V

MUN5113T1G Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing the device on a thick copper plane, using thermal vias to dissipate heat, and keeping the surrounding area clear of other components. A 2-3 oz copper thickness is recommended. Refer to onsemi's application note AND8193/D for more details.
  • To ensure reliable operation in high-temperature environments, follow the recommended derating curves, ensure good thermal design, and consider using a heat sink. Also, ensure that the device is operated within the specified junction temperature (Tj) range of -55°C to 150°C.
  • The maximum allowed voltage on the gate pin is ±20V, but it's recommended to keep it within ±15V to ensure reliable operation and prevent damage to the device.
  • Yes, the MUN5113T1G is suitable for switching applications due to its low RDS(on) and high current capability. However, ensure that the device is operated within the specified switching frequency and duty cycle to prevent overheating and reduce electromagnetic interference (EMI).
  • To protect the device from ESD, follow proper handling and storage procedures, use ESD-safe materials, and consider adding ESD protection devices such as TVS diodes or ESD arrays in the circuit design.

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MUN5113T1G Overview

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