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MUN5114DW1T1G - onsemi

Description: Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual PNP

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PCB Footprints
MUN5114DW1T1G - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE W
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3D Models
MUN5114DW1T1G - onsemi  - 3D model - SOT23 (6-Pin) - SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE W
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MUN5114DW1T1G Details

  • Manufacturer Part Number:

    MUN5114DW1T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-88/SC70-6/SOT-363 6 LEAD

  • Pin Count:

    6

  • Manufacturer Package Code:

    419B-02

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    BUILT-IN BIAS RESISTOR RATIO IS 0.21

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    80

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.15 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MUN5114DW1T1G Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance would be to have a solid ground plane on the bottom layer, and to use thermal vias to connect the thermal pad of the MUN5114DW1T1G to the ground plane. This helps to dissipate heat efficiently.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including the maximum junction temperature (Tj) of 150°C. Also, ensure good thermal design, and consider using a heat sink if necessary.
  • The recommended input capacitor value is typically in the range of 1-10uF, and a low-ESR ceramic capacitor (e.g., X5R or X7R) is recommended to minimize voltage ripple and ensure stable operation.
  • To protect the device from overvoltage and overcurrent conditions, consider using a voltage regulator with overvoltage protection (OVP) and overcurrent protection (OCP) features. Additionally, add a fuse or a polyfuse in series with the input to prevent excessive current.
  • The recommended output capacitor value is typically in the range of 1-10uF, and a low-ESR ceramic capacitor (e.g., X5R or X7R) is recommended to minimize voltage ripple and ensure stable operation.

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MUN5114DW1T1G Overview

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Part Image MUN5114DW1T1 Rochester Electronics LLC

100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 419B-02, SC-70, SC-88, 6 PIN

Part Image MUN5114DW1T1 LRC Leshan Radio Co Ltd

Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, PNP, Silicon

Part Image MUN5114DW1T1 onsemi

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon