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MUN5211T1G - onsemi

Description: Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

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PCB Footprints
MUN5211T1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SC−70 (SOT−323) CASE 419 ISSUE R
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MUN5211T1G Details

  • Manufacturer Part Number:

    MUN5211T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-70 (SOT-323) 3 LEAD

  • Package Description:

    SC-70, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    419-04

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    BUILT-IN BIAS RESISTOR RATIO IS 1

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    35

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.31 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MUN5211T1G Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve heat dissipation. A minimum of 2 oz copper thickness and a thermal relief pattern are suggested. Refer to onsemi's application note AND8193/D for more details.
  • Ensure proper heat sinking, use a thermally conductive interface material, and follow the recommended PCB layout. Also, consider derating the device's power dissipation according to the temperature derating curve in the datasheet.
  • The device has built-in ESD protection, but handling precautions are still necessary. Use an ESD wrist strap or mat, and handle the device by the body or pins, avoiding direct contact with the die.
  • Yes, the MUN5211T1G is suitable for switching regulator applications. However, ensure the device is operated within its safe operating area (SOA) and follow the recommended layout and thermal management guidelines.
  • Store the device in its original packaging or an anti-static bag, away from direct sunlight and moisture. Avoid bending or flexing the leads, and handle the device by the body or pins to prevent damage.

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MUN5211T1G Overview

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Part Image MUN5211T1 onsemi

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon