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MUN5212T1G - onsemi

Description: Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

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PCB Footprints
MUN5212T1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SC−70 (SOT−323) CASE 419 ISSUE R
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3D Models
MUN5212T1G - onsemi  - 3D model - SOT23 (3-Pin) - SC−70 (SOT−323) CASE 419 ISSUE R
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MUN5212T1G Details

  • Manufacturer Part Number:

    MUN5212T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-70 (SOT-323) 3 LEAD

  • Pin Count:

    3

  • Manufacturer Package Code:

    419-04

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    BUILT-IN BIAS RESISTOR RATIO IS 1

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    60

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.31 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MUN5212T1G Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the MUN5212T1G is 10V to 30V, with a maximum voltage rating of 40V.
  • To ensure proper biasing, connect the base of the transistor to a voltage source through a resistor, and connect the emitter to ground through a resistor. The base-emitter voltage should be around 0.7V to 1.0V for optimal performance.
  • The maximum current rating for the MUN5212T1G is 3A, with a maximum power dissipation of 1.5W.
  • To protect the MUN5212T1G from overheating, ensure good heat sinking, use a heat sink with a thermal resistance of 10°C/W or less, and keep the ambient temperature below 150°C.
  • The storage temperature range for the MUN5212T1G is -55°C to 150°C.

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MUN5212T1G Overview

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Part Image MUN5212T1 onsemi

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon