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MUN5215DW1T1G - onsemi

Description: NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant; Simplifies Circuit Design; Reduces Board Space; Reduces Component Count

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Symbol
MUN5215DW1T1G - onsemi - PCB symbol
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PCB Footprints
MUN5215DW1T1G - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SOT−363 CASE 419B−02
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3D Models
MUN5215DW1T1G - onsemi - 3D model - SOT23 (6-Pin) - SOT−363 CASE 419B−02
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MUN5215DW1T1G Details

  • Manufacturer Part Number:

    MUN5215DW1T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-88/SC70-6/SOT-363 6 LEAD

  • Pin Count:

    6

  • Manufacturer Package Code:

    419B-02

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    BUILT-IN BIAS RESISTOR

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    160

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.385 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • VCEsat-Max:

    0.25 V

MUN5215DW1T1G Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve heat dissipation. A minimum of 2 oz copper thickness and a thermal relief pattern are recommended. Refer to the onsemi application note AND8193/D for more details.
  • Ensure that the device is operated within the recommended operating temperature range (-40°C to 150°C). Use a heat sink or thermal interface material to improve heat dissipation. Monitor the device's junction temperature (TJ) and ensure it does not exceed 150°C.
  • The MUN5215DW1T1G has built-in ESD protection, but it is still recommended to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that all equipment is properly grounded.
  • Yes, the MUN5215DW1T1G is qualified for automotive and high-reliability applications. It meets the requirements of AEC-Q101 and is PPAP capable. However, additional testing and validation may be required for specific applications.
  • Check the device's input and output voltage levels, ensure proper PCB layout and decoupling, and verify that the device is operated within the recommended frequency range. Use an oscilloscope to monitor the device's switching waveforms and identify any anomalies.

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MUN5215DW1T1G Overview

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