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MUN5215T1G - onsemi

Description: Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

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PCB Footprints
MUN5215T1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SC-70 (SOT-323) CASE419-04
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3D Models
MUN5215T1G - onsemi  - 3D model - SOT23 (3-Pin) - SC-70 (SOT-323) CASE419-04
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MUN5215T1G Details

  • Manufacturer Part Number:

    MUN5215T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-70 (SOT-323) 3 LEAD

  • Pin Count:

    3

  • Manufacturer Package Code:

    419-04

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    BUILT-IN BIAS RESISTOR

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    160

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.31 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MUN5215T1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Implement a robust thermal management system, including a heat sink and thermal interface material. Ensure good airflow and avoid thermal hotspots.
  • Monitor the device's junction temperature, current, and voltage. Implement over-temperature, over-current, and over-voltage protection to prevent damage.
  • Yes, but ensure the PCB layout is optimized for high-frequency operation, and consider using a gate driver with a low output impedance to minimize ringing.
  • Use a shielded enclosure, keep high-frequency traces short, and use a common-mode choke or ferrite bead to filter out EMI. Ensure good grounding and decoupling.

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MUN5215T1G Overview

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Part Image MUN5215T1 onsemi

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon