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MUN5230DW1T1G - onsemi

Description: Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

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PCB Footprints
MUN5230DW1T1G - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SOT−363-6
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3D Models
MUN5230DW1T1G - onsemi  - 3D model - SOT23 (6-Pin) - SOT−363-6
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MUN5230DW1T1G Details

  • Manufacturer Part Number:

    MUN5230DW1T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-88/SC70-6/SOT-363 6 LEAD

  • Pin Count:

    6

  • Manufacturer Package Code:

    419B-02

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    BUILT-IN BIAS RESISTOR RATIO IS 1

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    3

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.385 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MUN5230DW1T1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias under the device can help to dissipate heat efficiently. The datasheet provides a recommended PCB layout, but it's essential to consult with a thermal expert or perform thermal simulations to ensure optimal performance.
  • The MUN5230DW1T1G requires a specific biasing scheme to operate within its recommended operating conditions. Ensure that the input voltage is within the recommended range (typically 1.8V to 5.5V), and the output voltage is properly terminated. Consult the datasheet for specific biasing requirements and recommendations.
  • Operating the MUN5230DW1T1G beyond its recommended operating conditions can lead to reduced performance, increased power consumption, and potentially even device failure. Ensure that the device is operated within its recommended temperature range, voltage range, and current limits to ensure reliable operation.
  • To troubleshoot issues with the MUN5230DW1T1G, start by consulting the datasheet and application notes. Check the device's operating conditions, biasing, and PCB layout. Use oscilloscopes and other diagnostic tools to identify the root cause of the issue. If necessary, contact onsemi's technical support for further assistance.
  • The MUN5230DW1T1G is a high-reliability device with a proven track record in various applications. onsemi provides detailed reliability and quality metrics, including MTBF (Mean Time Between Failures), FIT (Failure In Time), and other relevant data. Consult the datasheet and onsemi's quality and reliability documentation for more information.

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MUN5230DW1T1G Overview

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Part Image MUN5230DW1T1 onsemi

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon