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MUN5312DW1T1G - onsemi

Description: Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

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Symbol
MUN5312DW1T1G - onsemi - PCB symbol
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PCB Footprints
MUN5312DW1T1G - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE Y
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3D Models
MUN5312DW1T1G - onsemi - 3D model - SOT23 (6-Pin) - SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE Y
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MUN5312DW1T1G Details

  • Manufacturer Part Number:

    MUN5312DW1T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-88/SC70-6/SOT-363 6 LEAD

  • Pin Count:

    6

  • Manufacturer Package Code:

    419B-02

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    BUILT IN BIAS RESISTANCE RATIO IS 1

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    60

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN AND PNP

  • Power Dissipation-Max (Abs):

    0.15 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MUN5312DW1T1G Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve thermal performance. A minimum of 2 oz copper thickness and a thermal relief pattern are recommended for optimal heat dissipation.
  • Ensure that the device is operated within the recommended temperature range (TJ = -40°C to 150°C). Use a heat sink or thermal interface material to maintain a safe junction temperature. Monitor the device's thermal performance and adjust the system design as needed.
  • The MUN5312DW1T1G has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures when handling the device. Use an ESD wrist strap or mat, and ensure that the device is stored in an ESD-safe environment.
  • Yes, the MUN5312DW1T1G is suitable for high-reliability applications. However, it's essential to follow onsemi's recommended design and manufacturing guidelines to ensure the device meets the required reliability standards.
  • Use a systematic approach to troubleshoot issues. Check the device's operating conditions, PCB layout, and component selection. Verify that the device is operated within the recommended specifications. Consult onsemi's application notes and technical support resources for guidance.

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MUN5312DW1T1G Overview

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