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MUN5313DW1T1G - onsemi

Description: Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

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PCB Footprints
MUN5313DW1T1G - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE Y
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3D Models
MUN5313DW1T1G - onsemi  - 3D model - SOT23 (6-Pin) - SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE Y
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MUN5313DW1T1G Details

  • Manufacturer Part Number:

    MUN5313DW1T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-88/SC70-6/SOT-363 6 LEAD

  • Pin Count:

    6

  • Manufacturer Package Code:

    419B-02

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    BUILT-IN BIAS RESISTOR RATIO 1

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    80

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN AND PNP

  • Power Dissipation-Max (Abs):

    0.385 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MUN5313DW1T1G Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance would be to have a solid ground plane on the bottom layer, and a thermal relief pattern on the top layer. This helps to dissipate heat efficiently. Additionally, it's recommended to have a minimum of 2 oz copper thickness and a thermal via array under the device to improve heat dissipation.
  • To ensure proper biasing, it's essential to follow the recommended operating conditions outlined in the datasheet. This includes setting the input voltage (VCC) to the recommended range (typically 3.3V or 5V), and ensuring the output voltage (VOUT) is within the specified range. Additionally, it's crucial to decouple the input and output pins with suitable capacitors to minimize noise and ripple.
  • To ensure EMI and EMC compliance, it's essential to follow proper PCB layout and design practices. This includes using a solid ground plane, minimizing trace lengths, and using shielding or filtering components as needed. Additionally, it's recommended to use a common-mode choke or ferrite bead to reduce EMI emissions. It's also important to follow the recommended operating frequency range and ensure the device is properly decoupled.
  • The MUN5313DW1T1G has built-in overvoltage protection (OVP) and short-circuit protection (SCP). However, it's still recommended to add external protection components, such as a TVS diode or a fuse, to ensure the device is protected from voltage spikes and short-circuit conditions. Additionally, it's essential to follow proper PCB design practices to minimize the risk of electrical overstress (EOS).
  • For high-power applications, it's crucial to ensure proper thermal management to prevent overheating. This includes using a heat sink or thermal interface material (TIM) to improve heat dissipation. Additionally, it's recommended to use a thermal relief pattern on the PCB and to ensure good airflow around the device. It's also important to monitor the device's junction temperature (TJ) and ensure it remains within the specified range.

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MUN5313DW1T1G Overview

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Part Image MUN5313DW1T1 LRC Leshan Radio Co Ltd

Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, PNP, Silicon