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MUN5333DW1T1G - onsemi

Description: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

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PCB Footprints
MUN5333DW1T1G - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SC−88 2.00x1.25x0.90, 0.65P CASE 419B−02 ISSUE Z_2026-1.15
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MUN5333DW1T1G Details

  • Manufacturer Part Number:

    MUN5333DW1T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-88/SC70-6/SOT-363 6 LEAD

  • Pin Count:

    6

  • Manufacturer Package Code:

    419B-02

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    BUILT-IN BIAS RESISTOR RATIO 10

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    80

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN AND PNP

  • Power Dissipation-Max (Abs):

    0.385 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • VCEsat-Max:

    0.25 V

MUN5333DW1T1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Implement a robust thermal management system, including a heat sink and thermal interface material. Ensure good airflow and avoid thermal hotspots.
  • Use a soldering temperature of 260°C (max) with a dwell time of 10-30 seconds. Ensure a soldering iron with a temperature-controlled tip and a solder with a melting point above 217°C.
  • Yes, the MUN5333DW1T1G is AEC-Q101 qualified and suitable for high-reliability and automotive applications. However, ensure compliance with specific industry standards and regulations.
  • Implement ESD protection measures during handling, storage, and assembly. Use ESD-safe materials, wrist straps, and mats. Ensure a controlled ESD environment during manufacturing.

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MUN5333DW1T1G Overview

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Part Image MUN5333DW1T1 onsemi

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon