MVGSF1N03LT1G - onsemi

MVGSF1N03LT1G Details

• Manufacturer Part Number:

  MVGSF1N03LT1G

• Brand Name:

  onsemi

• Pbfree Code:

  Yes

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• Part Package Code:

  SOT-23 (TO-236) 3 LEAD

• Pin Count:

  3

• Manufacturer Package Code:

  318

• Country Of Origin:

  Mainland China

• ECCN Code:

  EAR99

• HTS Code:

  8541.21.00.95

• Factory Lead Time:

  9 Weeks

• Date Of Intro:

  1997-03-31

• Manufacturer:

  onsemi

• YTEOL:

  6.95

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  30 V

• Drain Current-Max (ID):

  2.1 A

• Drain-source On Resistance-Max:

  0.1 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• Feedback Cap-Max (Crss):

  40 pF

• JEDEC-95 Code:

  TO-236

• JESD-30 Code:

  R-PDSO-G3

• JESD-609 Code:

  e3

• Moisture Sensitivity Level:

  1

• Number of Elements:

  1

• Number of Terminals:

  3

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  150 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Peak Reflow Temperature (Cel):

  260

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation Ambient-Max:

  0.69 W

• Power Dissipation-Max (Abs):

  0.69 W

• Reference Standard:

  AEC-Q101

• Surface Mount:

  YES

• Terminal Finish:

  Matte Tin (Sn) - annealed

• Terminal Form:

  GULL WING

• Terminal Position:

  DUAL

• Time@Peak Reflow Temperature-Max (s):

  30

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON