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NDS331N - onsemi

Description: 1.3 A, 20 V RDS(ON) = 0.21Ω @ VGS= 2.7 V RDS(ON) = 0.16 Ω @ VGS= 4.5 V ; High density cell design for extremely low RDS(ON) ; Industry standard outline SOT-23 surface mount package using poprietary SuperSOT™-3 design for superior thermal and electrical capabilities ; Exceptional on-resistance and maximum DC current capability

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NDS331N - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT23-NDS
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NDS331N - onsemi  - 3D model - SOT23 (3-Pin) - SOT23-NDS
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NDS331N Details

  • Manufacturer Part Number:

    NDS331N

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23-3

  • Package Description:

    SUPERSOT-3

  • Manufacturer Package Code:

    527AG

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.9

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    1.3 A

  • Drain-source On Resistance-Max:

    0.16 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NDS331N Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the NDS331N is -55°C to 150°C.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to ground through a resistor. The recommended biasing voltage is typically around 10-15V.
  • The maximum current rating for the NDS331N is 3.5A.
  • To protect the NDS331N from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static bag or container.
  • Yes, the NDS331N can be used in switching applications, but it's essential to ensure that the device is properly biased and that the switching frequency is within the recommended range.

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NDS331N Overview

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Part Image NDS331ND87Z Fairchild Semiconductor Corporation

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