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NGB8207ABNT4G - onsemi

Description: IGBT Transistor, 50A 365V, 4-Pin D2PAK

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NGB8207ABNT4G - onsemi PCB footprint - Other - Other - NGB8207ABNT4G-1
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NGB8207ABNT4G Details

  • Manufacturer Part Number:

    NGB8207ABNT4G

  • Brand Name:

    ON Semiconductor

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Pin Count:

    3

  • Manufacturer Package Code:

    418B-04

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • Collector Current-Max (IC):

    20 A

  • Collector-Emitter Voltage-Max:

    365 V

  • Fall Time-Max (tf):

    15000 ns

  • Gate-Emitter Thr Voltage-Max:

    2 V

  • Gate-Emitter Voltage-Max:

    15 V

  • JESD-609 Code:

    e3

  • Operating Temperature-Max:

    175 °C

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    165 W

  • Rise Time-Max (tr):

    2700 ns

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

NGB8207ABNT4G Frequently Asked Questions (FAQs)

  • A good PCB layout should ensure minimal thermal resistance, use a solid ground plane, and keep sensitive nodes away from high-current paths. Thermal management involves using a heat sink, thermal interface material, and ensuring good airflow. Consult onsemi's application notes and layout guidelines for more information.
  • Optimize the gate drive circuit by selecting a suitable gate driver IC, ensuring a low-impedance gate drive path, and using a gate resistor to control the rise and fall times. The gate driver should be able to provide a high peak current and have a low output impedance. Consult onsemi's application notes and gate driver selection guides for more information.
  • The SOA limits are not explicitly stated in the datasheet, but they can be inferred from the maximum ratings and characteristic curves. Ensure you stay within the SOA limits by monitoring the device's voltage, current, and temperature, and by using a suitable thermal management system. Consult onsemi's application notes and SOA guidelines for more information.
  • Minimize the parasitic inductance and capacitance by using a compact PCB layout, keeping the leads short, and using a low-inductance package. You can also use simulation tools to model the parasitics and optimize the layout accordingly. Consult onsemi's application notes and layout guidelines for more information.
  • EMI and RFI can be mitigated by using a shielded layout, minimizing the loop area of the high-frequency currents, and using EMI filters or common-mode chokes. Ensure the device is properly decoupled, and use a suitable PCB material with low dielectric loss. Consult onsemi's application notes and EMI guidelines for more information.

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NGB8207ABNT4G Overview

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