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NGD8201BNT4G - onsemi

Description: IGBT Transistors N-CHANNEL IGNITION IGBT 2

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PCB Footprints
NGD8201BNT4G - onsemi PCB footprint - Other - Other - DPAK_CASE_369C ISSUE E
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3D Models
NGD8201BNT4G - onsemi  - 3D model - Other - DPAK_CASE_369C ISSUE E
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NGD8201BNT4G Details

  • Manufacturer Part Number:

    NGD8201BNT4G

  • Brand Name:

    ON Semiconductor

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0.4

  • Collector Current-Max (IC):

    15 A

  • Collector-Emitter Voltage-Max:

    430 V

  • Fall Time-Max (tf):

    15000 ns

  • Gate-Emitter Thr Voltage-Max:

    1.8 V

  • Gate-Emitter Voltage-Max:

    18 V

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Operating Temperature-Max:

    175 °C

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    115 W

  • Rise Time-Max (tr):

    7000 ns

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Time@Peak Reflow Temperature-Max (s):

    30

NGD8201BNT4G Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a 2-layer or 4-layer board with a solid ground plane, placing thermal vias under the device, and using a thermal pad on the bottom of the package. A minimum of 2 oz copper thickness is recommended.
  • To ensure reliable operation at high temperatures, it is essential to follow the recommended thermal design guidelines, use a suitable heat sink, and ensure good airflow around the device. Additionally, the device should be operated within the specified junction temperature range (TJ) of -40°C to 150°C.
  • The NGD8201BNT4G has built-in ESD protection, but it is still recommended to follow standard ESD handling procedures during assembly and testing. The device can withstand human body model (HBM) ESD pulses up to ±2 kV and charged device model (CDM) ESD pulses up to ±500 V.
  • Yes, the NGD8201BNT4G is suitable for high-reliability and automotive applications. It is AEC-Q101 qualified and meets the requirements for automotive-grade devices. However, it is essential to follow the recommended design and testing guidelines to ensure the device meets the specific application requirements.
  • To troubleshoot issues with the NGD8201BNT4G, start by verifying the device is properly soldered and the PCB layout is correct. Check the input and output voltages, and ensure the device is operated within the specified ratings. Use oscilloscopes or logic analyzers to debug the circuit, and consult the datasheet and application notes for guidance.

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NGD8201BNT4G Overview

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