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- Datasheet Download Datasheet
- Stock & Prices $ Price & Stock for NGTB15N60S1EG
- Part Number NGTB15N60S1EG
- Manufacturer onsemi
- Pin Count 1
- Part Category Transistor IGBT
- Package Category Transistor Outline, Vertical
- Last Modified Date Sep 19, 2024 2:45 PM UTC
- Pinout / Pin List Click Here (Member Only)
NGTB15N60S1EG Details
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Manufacturer Part Number:
NGTB15N60S1EG
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Brand Name:
onsemi
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Pbfree Code:
Yes
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Rohs Code:
Yes
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Part Life Cycle Code:
Obsolete
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Part Package Code:
TO-220 3 LEAD STANDARD
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Pin Count:
3
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Manufacturer Package Code:
221A
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Reach Compliance Code:
Not Compliant
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ECCN Code:
EAR99
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Factory Lead Time:
4 Weeks
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Manufacturer:
onsemi
NGTB15N60S1EG Frequently Asked Questions (FAQs)
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The maximum junction temperature (Tj) for the NGTB15N60S1EG is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation and to prevent thermal runaway.
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To ensure proper cooling, it's essential to provide a good thermal path from the device to a heat sink or a metal core printed circuit board (MCPCB). Use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K, and ensure the heat sink is properly mounted and secured.
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The recommended gate drive voltage for the NGTB15N60S1EG is between 10 V and 15 V. A higher gate drive voltage can reduce the switching losses, but it may also increase the gate charge and the risk of gate oxide damage.
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To protect the NGTB15N60S1EG from ESD, handle the device by the body or use an anti-static wrist strap or mat. Ensure the PCB is designed with ESD protection in mind, and consider adding ESD protection devices, such as TVS diodes, to the circuit.
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The maximum allowed dv/dt for the NGTB15N60S1EG is 10 kV/μs. Exceeding this limit can cause the device to malfunction or fail. Ensure the circuit is designed to limit the dv/dt to a safe value, and consider adding a snubber circuit or a gate resistor to reduce the dv/dt.
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NGTB15N60S1EG Overview
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