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NGTB20N120IHLWG - onsemi

Description: Obsolete - IGBT, 1200V 20A FS2-RC Induction Heating

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PCB Footprints
NGTB20N120IHLWG - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 CASE 340L-02
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3D Models
NGTB20N120IHLWG - onsemi  - 3D model - Transistor Outline, Vertical - TO-247 CASE 340L-02
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NGTB20N120IHLWG Details

  • Manufacturer Part Number:

    NGTB20N120IHLWG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247

  • Pin Count:

    3

  • Manufacturer Package Code:

    340L-02

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    40 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    192 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    485 ns

NGTB20N120IHLWG Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to use a 2-oz copper thickness, with a thermal relief pattern on the drain pad, and a solid copper pour on the source pad. Additionally, using a thermal via array under the device can help to dissipate heat more efficiently.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, including proper heat sinking, thermal interface material selection, and PCB layout. Additionally, consider derating the device's power handling capabilities at higher temperatures to prevent thermal runaway.
  • The recommended gate drive circuits for the NGTB20N120IHLWG include a non-inverting gate driver with a pull-up resistor and a pull-down resistor to ensure proper turn-on and turn-off characteristics. A gate resistor value between 10 ohms to 20 ohms is recommended to limit the gate current and prevent oscillations.
  • To handle ESD protection for the NGTB20N120IHLWG, it's recommended to use a combination of ESD protection devices, such as TVS diodes or ESD arrays, on the gate, drain, and source pins. Additionally, follow proper handling and storage procedures to prevent ESD damage during manufacturing and assembly.
  • Using a lower voltage rating than the recommended 1200V may reduce the device's power handling capabilities and affect its overall performance. Using a higher voltage rating may exceed the device's safe operating area and lead to premature failure or reduced lifespan. It's essential to follow the recommended voltage rating to ensure reliable operation.

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