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NGTB25N120IHLWG - onsemi

Description: Obsolete - IGBT 1200V 25A FS1 Gen Mkt

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PCB Footprints
NGTB25N120IHLWG - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 CASE 340L-02
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3D Models
NGTB25N120IHLWG - onsemi  - 3D model - Transistor Outline, Vertical - TO-247 CASE 340L-02
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NGTB25N120IHLWG Details

  • Manufacturer Part Number:

    NGTB25N120IHLWG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247

  • Pin Count:

    3

  • Manufacturer Package Code:

    340L-02

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    50 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    192 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    475 ns

NGTB25N120IHLWG Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the NGTB25N120IHLWG is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a good thermal path from the device to a heat sink or a heat spreader. Use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K, and ensure the heat sink is designed for the device's power dissipation. A minimum of 0.5 mm² of copper area per watt of power dissipation is recommended.
  • The recommended gate drive voltage for the NGTB25N120IHLWG is between 10 V and 15 V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It's essential to consult the datasheet and application notes for more information.
  • Yes, the NGTB25N120IHLWG is suitable for high-reliability applications. It's manufactured using a robust process and has undergone rigorous testing to ensure its reliability. However, it's essential to follow proper design and assembly guidelines, as well as environmental and operating conditions, to ensure the device meets the required reliability standards.
  • The NGTB25N120IHLWG is an ESD-sensitive device. To prevent damage, handle the device by the body or use an ESD wrist strap or mat. Ensure that all equipment and tools used during assembly and testing are ESD-protected. Follow proper ESD handling procedures, and consider using ESD-protective packaging and storage materials.

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NGTB25N120IHLWG Overview

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