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NGTB30N135IHRWG - onsemi

Description: Last Shipments - 1400V, 30A, IGBT with Monolithic Free Wheeling Diode

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PCB Footprints
NGTB30N135IHRWG - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−247 CASE 340AL ISSUE D
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3D Models
NGTB30N135IHRWG - onsemi  - 3D model - Transistor Outline, Vertical - TO−247 CASE 340AL ISSUE D
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NGTB30N135IHRWG Details

  • Manufacturer Part Number:

    NGTB30N135IHRWG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247

  • Pin Count:

    3

  • Manufacturer Package Code:

    340AL

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    60 A

  • Collector-Emitter Voltage-Max:

    1350 V

  • Gate-Emitter Thr Voltage-Max:

    6.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-609 Code:

    e3

  • Operating Temperature-Max:

    175 °C

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    394 W

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

NGTB30N135IHRWG Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the NGTB30N135IHRWG is -55°C to 175°C.
  • To ensure proper cooling, use a heat sink with a thermal resistance of ≤ 1°C/W, and apply a thermal interface material (TIM) with a thermal conductivity of ≥ 5 W/m-K.
  • The recommended gate drive voltage for the NGTB30N135IHRWG is between 10 V and 15 V, with a maximum gate-source voltage of ±20 V.
  • To protect the NGTB30N135IHRWG from ESD, handle the device in an ESD-protected environment, use ESD-protective packaging, and follow proper handling and storage procedures.
  • The maximum allowed current for the NGTB30N135IHRWG is 30 A, with a maximum pulsed current of 60 A.

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NGTB30N135IHRWG Overview

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