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NGTB30N60SWG - onsemi

Description: Obsolete - IGBT, 650V 30A FS2 Induction Heating

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PCB Footprints
NGTB30N60SWG - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 CASE 340L-02
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3D Models
NGTB30N60SWG - onsemi  - 3D model - Transistor Outline, Vertical - TO-247 CASE 340L-02
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NGTB30N60SWG Details

  • Manufacturer Part Number:

    NGTB30N60SWG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247-3

  • Manufacturer Package Code:

    340L-02

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    60 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    189 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    285 ns

  • Turn-on Time-Nom (ton):

    90 ns

NGTB30N60SWG Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the device, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat to the other layers. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended derating curves for the device, ensure good thermal design and layout, and consider using a heat sink or thermal interface material. Additionally, the device should be operated within the specified junction temperature (Tj) range.
  • The NGTB30N60SWG has an integrated ESD protection diode, but it's still recommended to follow proper ESD handling procedures during assembly and testing. A human body model (HBM) of 2kV and a machine model (MM) of 200V are recommended for ESD protection.
  • Yes, the NGTB30N60SWG can be used in a parallel configuration to increase current handling, but it's essential to ensure that the devices are properly matched and that the gate drive and layout are designed to minimize current imbalance and oscillations.
  • The recommended gate drive voltage for the NGTB30N60SWG is 10-15V, with a gate current of 1-2A. The gate drive should be designed to provide a fast rise and fall time (typically <10ns) to minimize switching losses.

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NGTB30N60SWG Overview

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