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NGTB40N120FL2WG - onsemi

Description: Extremely Efficient Trench with Field Stop Technology; TJmax = 175°C; Soft Fast Reverse Recovery Diode; Optimized for High Speed Switching; 10 µs Short Circuit Capability

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PCB Footprints
NGTB40N120FL2WG - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−247
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3D Models
NGTB40N120FL2WG - onsemi  - 3D model - Transistor Outline, Vertical - TO−247
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NGTB40N120FL2WG Details

  • Manufacturer Part Number:

    NGTB40N120FL2WG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247

  • Pin Count:

    3

  • Manufacturer Package Code:

    340AM

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    21 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Gate-Emitter Thr Voltage-Max:

    6.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-609 Code:

    e3

  • Operating Temperature-Max:

    175 °C

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    535 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

NGTB40N120FL2WG Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the NGTB40N120FL2WG is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material (TIM) to the device's exposed thermal pad, and ensure the heat sink is securely fastened to the device. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate drive voltage for the NGTB40N120FL2WG is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It's essential to consult the datasheet and application notes for more information.
  • To protect the NGTB40N120FL2WG from overvoltage and overcurrent, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, consider using a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.
  • For optimal performance and to minimize electromagnetic interference (EMI), it's recommended to follow a star-point grounding scheme and keep the high-frequency loops as small as possible. Keep the gate drive traces short and away from the power traces, and use a solid ground plane to reduce noise and EMI.

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