Part Image

NGTB40N60FLWG - onsemi

Description: Obsolete - IGBT, Field Stop (FS), 40 A, 600 V

Download NGTB40N60FLWG Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
NGTB40N60FLWG - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 CASE 340L-02
click to zoom
3D Models
NGTB40N60FLWG - onsemi  - 3D model - Transistor Outline, Vertical - TO-247 CASE 340L-02
click to zoom

NGTB40N60FLWG Details

  • Manufacturer Part Number:

    NGTB40N60FLWG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247

  • Pin Count:

    3

  • Manufacturer Package Code:

    340L-02

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Gate-Emitter Thr Voltage-Max:

    6.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-609 Code:

    e3

  • Operating Temperature-Max:

    150 °C

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    257 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

NGTB40N60FLWG Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the NGTB40N60FLWG is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
  • To ensure proper cooling, it's essential to provide a good thermal path from the device to a heat sink or a cold plate. Use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K, and ensure the heat sink is designed for the maximum power dissipation of the device.
  • The recommended gate drive voltage for the NGTB40N60FLWG is between 10V and 15V. A higher gate drive voltage can reduce the switching losses, but it may also increase the gate oxide stress. A lower gate drive voltage can reduce the gate oxide stress, but it may increase the switching losses.
  • To protect the NGTB40N60FLWG from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, use a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.
  • For optimal performance and to minimize electromagnetic interference (EMI), use a multi-layer PCB with a solid ground plane and a separate power plane. Keep the high-frequency loops small, and use a Kelvin connection for the gate drive signal.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

NGTB40N60FLWG Overview

Use the download button to access the NGTB40N60FLWG schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like NGTB4, or try a keyword search, such as IGBTs

Parts related to NGTB40N60FLWG

Showing 0 results