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NIS5132MN1TXG - onsemi

Description: Integrated Power Device • Power Device Thermally Protected • No External Current Shunt Required • 9 V to 18 V Input Range • 44 m Typical • Internal Charge Pump • Internal Undervoltage Lockout Circuit • Internal Overvoltage Clamp (MN1 and MN2 versions) • ESD Ratings: Human Body Model (HBM); 2000 V Machine Model (MM); 200 V • These Devices are Pb−Free and are RoHS Compliant

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PCB Footprints
NIS5132MN1TXG - onsemi PCB footprint - Small Outline No-lead - Small Outline No-lead - DFN10, 3x3, 0.5P CASE 485C ISSUE F
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3D Models
NIS5132MN1TXG - onsemi  - 3D model - Small Outline No-lead - DFN10, 3x3, 0.5P CASE 485C ISSUE F
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NIS5132MN1TXG Details

  • Manufacturer Part Number:

    NIS5132MN1TXG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    DFN10, 3x3, 0.5P

  • Pin Count:

    10

  • Manufacturer Package Code:

    485C

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.60

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Adjustable Threshold:

    NO

  • Analog IC - Other Type:

    eFUSE

  • JESD-30 Code:

    S-XDSO-N10

  • JESD-609 Code:

    e3

  • Length:

    3 mm

  • Moisture Sensitivity Level:

    1

  • Number of Channels:

    1

  • Number of Functions:

    1

  • Number of Terminals:

    10

  • Package Body Material:

    UNSPECIFIED

  • Package Code:

    VSON

  • Package Equivalence Code:

    SOLCC10,.12,20

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE, VERY THIN PROFILE

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Seated Height-Max:

    1 mm

  • Supply Voltage-Max (Vsup):

    18 V

  • Supply Voltage-Min (Vsup):

    9 V

  • Supply Voltage-Nom (Vsup):

    12 V

  • Surface Mount:

    YES

  • Temperature Grade:

    OTHER

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Pitch:

    0.5 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Width:

    3 mm

NIS5132MN1TXG Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
  • The maximum allowed voltage on the enable pin (EN) is 6V. Exceeding this voltage may damage the device.
  • Yes, the NIS5132MN1TXG is AEC-Q100 qualified and suitable for high-reliability and automotive applications. However, ensure that the device is used within its recommended operating conditions and follow the recommended PCB layout and thermal management guidelines.
  • Check the OCP threshold setting, ensure proper PCB layout, and verify that the device is not overheating. Also, check for any electrical overstress or surge events that may have triggered the OCP.

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NIS5132MN1TXG Overview

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