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NIS6452MT2TWG - onsemi

Description: Fast Response Overvoltage Clamp Circuit; Digital and Tristate Enable; 42 mΩ Typical; Integrated Reverse Current Protection; Thermally Protected; Integrated Soft−Start Circuit; Internal Undervoltage Lockout Circuit

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PCB Footprints
NIS6452MT2TWG - onsemi PCB footprint - Other - Other - WQFN12 3.0x2.0, 0.5P CASE 510BM ISSUE C
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3D Models
NIS6452MT2TWG - onsemi  - 3D model - Other - WQFN12 3.0x2.0, 0.5P CASE 510BM ISSUE C
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NIS6452MT2TWG Details

  • Manufacturer Part Number:

    NIS6452MT2TWG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WQFN-12

  • Package Description:

    WQFN-12

  • Manufacturer Package Code:

    510BM

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.60

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Adjustable Threshold:

    NO

  • Analog IC - Other Type:

    eFUSE

  • JESD-30 Code:

    R-XQCC-N12

  • JESD-609 Code:

    e4

  • Length:

    3 mm

  • Moisture Sensitivity Level:

    1

  • Number of Channels:

    1

  • Number of Functions:

    1

  • Number of Terminals:

    12

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Code:

    HVQCCN

  • Package Equivalence Code:

    LCC12,.08X.12,20

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

  • Peak Reflow Temperature (Cel):

    260

  • Seated Height-Max:

    0.8 mm

  • Supply Voltage-Nom (Vsup):

    5 V

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

  • Terminal Form:

    NO LEAD

  • Terminal Pitch:

    0.5 mm

  • Terminal Position:

    QUAD

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Width:

    2 mm

NIS6452MT2TWG Frequently Asked Questions (FAQs)

  • The recommended PCB layout and thermal management for the NIS6452MT2TWG involve using a multi-layer board with a solid ground plane, placing the device near the edge of the board, and using thermal vias to dissipate heat. A heat sink or thermal pad can also be used to improve thermal performance.
  • To ensure EMC with the NIS6452MT2TWG, follow proper PCB design and layout guidelines, use shielding and filtering components, and ensure that the device is properly decoupled and bypassed. Additionally, consider using a metal shield or enclosure to reduce electromagnetic radiation.
  • The NIS6452MT2TWG has built-in surge protection and overvoltage protection, but it is not designed to withstand extreme surge events or overvoltages. Additional protection components, such as TVS diodes or varistors, may be necessary to ensure reliable operation in harsh environments.
  • To troubleshoot issues with the NIS6452MT2TWG, start by reviewing the datasheet and application notes, checking the PCB layout and component placement, and verifying that the device is properly powered and configured. Use oscilloscopes and logic analyzers to debug the circuit and identify the root cause of the issue.
  • Yes, the input and output capacitors used with the NIS6452MT2TWG should be selected based on the device's operating frequency, output current, and voltage rating. Low-ESR capacitors with a high ripple current rating are recommended to ensure stable operation and minimize voltage drops.

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NIS6452MT2TWG Overview

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