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NJVMJB44H11T4G - onsemi

Description: Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 V (Max) @ 8.0 A; Fast Switching Speeds; Complementary Pairs Simplifies Designs; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

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MJB44H11T4-A STMicroelectronics

Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-263AB, Plastic/Epoxy, 2 Pin

MJB44H11T4 onsemi

Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

MJB44H11 onsemi

Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

MJB44H11T4 STMicroelectronics

Power Bipolar Transistor, 10A I(C), 1-Element, NPN


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Image	Part Number	Model
	MJB44H11T4-A STMicroelectronics Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-263AB, Plastic/Epoxy, 2 Pin
	MJB44H11T4 onsemi Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
	MJB44H11 onsemi Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
	MJB44H11T4 STMicroelectronics Power Bipolar Transistor, 10A I(C), 1-Element, NPN
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NJVMJB44H11T4G - onsemi

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