Part Image

NJVMJD350T4G - onsemi

Description: Straight Lead Version in Plastic Sleeves (-1 Suffix); Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Electrically Similar to Popular MJE340 and MJE350; 300 V (Min) VCEO(sus); Lead Formed Version in 16 mm Tape and Reel (T4 Suffix); 0.5 A Rated Collector Current; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free and are RoHS Compliant

Download NJVMJD350T4G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
NJVMJD350T4G - onsemi  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

NJVMJD350T4G Details

  • Manufacturer Part Number:

    NJVMJD350T4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Vietnam

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    6 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    0.5 A

  • Collector-Emitter Voltage-Max:

    300 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    30

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -65 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    15 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    10 MHz

NJVMJD350T4G Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the NJVMJD350T4G is a pad size of 2.5mm x 2.5mm with a 1.5mm x 1.5mm thermal pad.
  • Ensure good thermal contact between the device and a heat sink or thermal pad. Use a thermal interface material (TIM) and follow the recommended mounting torque to minimize thermal resistance.
  • The maximum allowed voltage for the NJVMJD350T4G's gate-source voltage (Vgs) is ±20V. Exceeding this voltage may damage the device.
  • Yes, the NJVMJD350T4G is suitable for high-frequency switching applications due to its low gate charge (Qg) and low output capacitance (Coss). However, ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
  • Handle the NJVMJD350T4G with ESD-protective equipment and follow proper ESD handling procedures. Use an ESD-protective wrist strap or mat, and ensure the device is stored in an ESD-protective package.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

NJVMJD350T4G Overview

Use the download button to access the NJVMJD350T4G 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like NJVMJ, or try a keyword search, such as Power Bipolar Transistors

Parts related to NJVMJD350T4G

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview

NJVMJD350T4G Alternates

Showing results

Image Part Number Model
Part Image MJD350TF onsemi

Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin

Part Image MJD350 Fairchild Semiconductor Corporation

Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin

Part Image CJD350TR13 Central Semiconductor Corp

Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

Part Image CJD350BK Central Semiconductor Corp

Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

Part Image KSH350 Samsung Semiconductor

Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

For a full list of alternate parts for NJVMJD350T4G, check out Findchips.com