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NJVNJD2873T4G - onsemi

Description: High DC Current Gain - hfe = 120(min)@Ic = 500 mA; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free and are RoHS Compliant

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NJVNJD2873T4G - onsemi PCB footprint - Other - Other - DPAK (SINGLE GAUGE) CASE 369C ISSUEF_FFW
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NJVNJD2873T4G - onsemi  - 3D model - Other - DPAK (SINGLE GAUGE) CASE 369C ISSUEF_FFW
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NJVNJD2873T4G Details

  • Manufacturer Part Number:

    NJVNJD2873T4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Package Description:

    DPAK-3

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    2 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    40

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -65 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    15 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    65 MHz

NJVNJD2873T4G Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the NJVNJD2873T4G is a standard SOT-223 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • To ensure proper thermal management, use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K, and ensure the MOSFET is mounted on a heat sink with a thermal resistance of less than 10°C/W.
  • The maximum allowed voltage for the NJVNJD2873T4G's gate-source voltage (Vgs) is ±20V, but it's recommended to keep it within ±15V for reliable operation.
  • Yes, the NJVNJD2873T4G is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
  • Handle the NJVNJD2873T4G with ESD-protective equipment, and ensure the PCB has ESD protection circuits, such as TVS diodes or ESD-protection ICs, to prevent damage from static electricity.

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NJVNJD2873T4G Overview

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