NJVNJ Model Download Search Results
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NJVNJD2873T4G
onsemi
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1 | High DC Current Gain - hfe = 120(min)@Ic = 500 mA; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free and are RoHS Compliant | Other | NJVNJD2873T4G |
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NJVNJD35N04T4G
onsemi
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1 | Exceptional Safe Operating Area; High VCE; High Current Gain; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These are PbFree Devices | Other | NJVNJD35N04T4G |
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NJVNJD2873T4G-VF01
onsemi
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1 | Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin | NJVNJD2873T4G-VF01 |
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NJVNJD35N04G
onsemi
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1 | Power Bipolar Transistor, 4A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin | NJVNJD35N04G |
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NJVNJD1718T4G
onsemi
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1 | Low Collector-Emitter Saturation Voltage; Meets UL94 V-0 @ 0.125 | NJVNJD1718T4G |
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