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NRVBAF260T3G - onsemi

Description: Diode 60 V 2A Surface Mount SMA-FL,150°C Operating Junction Temperature,Storage Temperature Range Tstg −55 to +150 °C

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NRVBAF260T3G - onsemi - PCB symbol
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PCB Footprints
NRVBAF260T3G - onsemi PCB footprint - Small Outline Diode Flat Lead - Small Outline Diode Flat Lead - SMA 2.60x4.30x1.00 CASE 403AA ISSUE A
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3D Models
NRVBAF260T3G - onsemi - 3D model - Small Outline Diode Flat Lead - SMA 2.60x4.30x1.00 CASE 403AA ISSUE A
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NRVBAF260T3G Details

  • Manufacturer Part Number:

    NRVBAF260T3G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SMA-FL

  • Manufacturer Package Code:

    403AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.07

  • Additional Feature:

    FREE WHEELING DIODE

  • Application:

    POWER

  • Breakdown Voltage-Min:

    60 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.63 V

  • JESD-30 Code:

    R-PDSO-F2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    60 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    2 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    60 V

  • Reverse Current-Max:

    200 µA

  • Reverse Test Voltage:

    60 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

NRVBAF260T3G Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. A minimum of 2oz copper thickness is recommended. Additionally, vias should be placed under the thermal pad to connect to an internal copper plane or a heat sink.
  • The NRVBAF260T3G requires a bias voltage of 2.5V to 5.5V. A stable voltage regulator or a low-dropout regulator (LDO) should be used to ensure a clean and stable bias voltage. Additionally, decoupling capacitors should be placed close to the device to filter out noise and ensure stable operation.
  • The NRVBAF260T3G is designed to operate up to 2.7 GHz. However, the actual operating frequency may vary depending on the specific application and PCB layout. It is recommended to consult the datasheet and application notes for more information.
  • The NRVBAF260T3G has built-in ESD protection, but additional protection measures should be taken during handling and assembly. It is recommended to use an ESD wrist strap or mat, and to handle the device by the body rather than the leads. Additionally, ESD-sensitive devices should be stored in anti-static packaging.
  • The NRVBAF260T3G should be stored in a dry, cool place away from direct sunlight. The device should be handled in a clean and dry environment, and should not be exposed to moisture or extreme temperatures. It is recommended to follow the JEDEC standard for storage and handling of moisture-sensitive devices.

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NRVBAF260T3G Overview

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Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 60V V(RRM), Silicon