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NSBC114EDXV6T1G - onsemi

Description: Dual NPN Bipolar Digital Transistor (BRT), NPN Transistors with Monolithic Bias Resistor Network

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NSBC114EDXV6T1G - onsemi - PCB symbol
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PCB Footprints
NSBC114EDXV6T1G - onsemi PCB footprint - Other - Other - SOT−563−6 1.60x1.20x0.55, 0.50P CASE 463A_2025
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3D Models
NSBC114EDXV6T1G - onsemi - 3D model - Other - SOT−563−6 1.60x1.20x0.55, 0.50P CASE 463A_2025
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NSBC114EDXV6T1G Details

  • Manufacturer Part Number:

    NSBC114EDXV6T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-563, 6 LEAD

  • Pin Count:

    6

  • Manufacturer Package Code:

    463A-01

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    BUILT IN BIAS RESISTOR RATIO IS 1

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    35

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NSBC114EDXV6T1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure that the device is operated within the recommended voltage and current ratings, and that the PCB is designed to minimize thermal resistance. Also, consider using a thermal interface material (TIM) to improve heat transfer between the device and heat sink.
  • The critical timing parameters include the input rise and fall times, propagation delay, and output enable/disable times. These parameters are critical for ensuring reliable data transmission and reception.
  • The NSBC114EDXV6T1G has built-in ESD protection, but additional protection measures can be taken, such as using ESD-protection diodes or resistors, and following proper handling and storage procedures to prevent ESD damage.
  • The power sequencing requirements include ensuring that the power supply voltage (VCC) is applied before the input signals, and that the power-down sequence is followed to prevent damage to the device.

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NSBC114EDXV6T1G Overview

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Part Image NSBC114EDXV6T1 onsemi

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon