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NSBC114EPDXV6T1G - onsemi

Description: Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

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NSBC114EPDXV6T1G - onsemi PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - SOT-563 6 LEAD CASE 463A-01 ISSUE O
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NSBC114EPDXV6T1G - onsemi  - 3D model - SO Transistor Flat Lead - SOT-563 6 LEAD CASE 463A-01 ISSUE O
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NSBC114EPDXV6T1G Details

  • Manufacturer Part Number:

    NSBC114EPDXV6T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-563, 6 LEAD

  • Pin Count:

    6

  • Manufacturer Package Code:

    463A-01

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    BUILT IN BIAS RESISTOR RATIO IS 1

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    35

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN AND PNP

  • Power Dissipation-Max (Abs):

    0.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NSBC114EPDXV6T1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout guidelines. Also, consider using a heat sink or thermal pad to keep the junction temperature below 150°C.
  • The maximum allowed voltage on the input pins is 5.5V. Exceeding this voltage may damage the device.
  • Use ESD protection devices such as TVS diodes or ESD arrays on the input lines to protect the device from electrostatic discharge. Follow proper PCB layout guidelines to minimize ESD risk.
  • Power up the device in the following sequence: VCC, then VIN, and finally the input signals. This ensures proper device initialization and prevents latch-up or damage.

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NSBC114EPDXV6T1G Overview

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