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NSBC114TDP6T5G - onsemi

Description: Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

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PCB Footprints
NSBC114TDP6T5G - onsemi PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - SOT−963 CASE 527AD−01 ISSUE E
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NSBC114TDP6T5G - onsemi  - 3D model - SO Transistor Flat Lead - SOT−963 CASE 527AD−01 ISSUE E
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NSBC114TDP6T5G Details

  • Manufacturer Part Number:

    NSBC114TDP6T5G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-963 1x1, 0.35P

  • Pin Count:

    6

  • Manufacturer Package Code:

    527AD

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    BUILT IN BIAS RESISTOR

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    160

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.408 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • VCEsat-Max:

    0.25 V

NSBC114TDP6T5G Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance would involve placing thermal vias under the device, using a solid ground plane, and keeping the thermal path as short as possible. It's also recommended to use a thermal pad on the bottom of the device and to connect it to a thermal plane or a heat sink.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including the maximum junction temperature (Tj) of 150°C. Additionally, consider using a heat sink, thermal interface material, and ensuring good airflow around the device. It's also crucial to monitor the device's temperature and adjust the operating conditions accordingly.
  • The NSBC114TDP6T5G has built-in ESD protection, but it's still important to follow proper ESD handling procedures during assembly and testing. This includes using an ESD wrist strap, ESD mat, and ESD-safe tools. Additionally, consider adding external ESD protection devices, such as TVS diodes, to further protect the device from ESD events.
  • To optimize the device's performance for low-power applications, consider reducing the operating frequency, using a lower supply voltage, and minimizing the load current. Additionally, use the device's built-in power-saving features, such as the low-power mode, and consider using a power management IC to optimize the power consumption of the entire system.
  • When assembling and soldering the NSBC114TDP6T5G, it's essential to follow the recommended soldering temperature and time profiles to avoid damaging the device. Use a soldering iron with a temperature range of 250°C to 260°C, and ensure the soldering time is within 3-5 seconds. Additionally, use a solder with a melting point above 217°C to prevent solder bridging.

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NSBC114TDP6T5G Overview

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