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NSBC123JPDP6T5G - onsemi

Description: Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

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PCB Footprints
NSBC123JPDP6T5G - onsemi PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - SOT−963 CASE 527AD−01 ISSUE E
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NSBC123JPDP6T5G - onsemi  - 3D model - SO Transistor Flat Lead - SOT−963 CASE 527AD−01 ISSUE E
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NSBC123JPDP6T5G Details

  • Manufacturer Part Number:

    NSBC123JPDP6T5G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-963 1x1, 0.35P

  • Pin Count:

    6

  • Manufacturer Package Code:

    527AD

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    BUILT IN BIAS RESISTOR RATIO 0.047

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    80

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN AND PNP

  • Power Dissipation-Max (Abs):

    0.408 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NSBC123JPDP6T5G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power dissipation at high temperatures.
  • The maximum allowed voltage on the input pins is the supply voltage (VCC) + 0.3V. Exceeding this voltage may damage the device.
  • Use ESD-safe handling and assembly procedures, including the use of ESD wrist straps, mats, and packaging materials. Ensure that the device is stored in its original packaging or an ESD-safe container.
  • A soldering profile with a peak temperature of 240°C to 250°C and a dwell time of 30 seconds to 60 seconds is recommended. Avoid exceeding 260°C to prevent damage to the device.

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NSBC123JPDP6T5G Overview

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