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NSS40300DDR2G - onsemi

Description: High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)

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NSS40300DDR2G - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC−8 NB_2022_1
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NSS40300DDR2G - onsemi  - 3D model - Small Outline Packages - SOIC−8 NB_2022_1
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NSS40300DDR2G Details

  • Manufacturer Part Number:

    NSS40300DDR2G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-8 Narrow Body

  • Pin Count:

    8

  • Manufacturer Package Code:

    751-07

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Collector Current-Max (IC):

    3 A

  • Collector-Emitter Voltage-Max:

    40 V

  • Configuration:

    SEPARATE, 2 ELEMENTS

  • DC Current Gain-Min (hFE):

    150

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.783 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    100 MHz

  • Turn-off Time-Max (toff):

    530 ns

  • Turn-on Time-Max (ton):

    180 ns

NSS40300DDR2G Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the signal traces short and away from noise sources. Use a 50-ohm impedance-controlled trace for the clock signal.
  • Ensure proper thermal management by providing adequate heat sinking and airflow. Use a thermal interface material (TIM) between the device and heat sink. Follow the recommended operating conditions and derating guidelines.
  • The input clock signal should be a differential signal with a peak-to-peak amplitude of 250-400 mV. The clock frequency should be within the specified range (e.g., 100-200 MHz). Ensure the clock signal has a low jitter (<100 ps) and a stable frequency.
  • Power up the device in the following sequence: VDD, VDDQ, and then VREF. Ensure that VDD and VDDQ are powered up simultaneously. VREF should be powered up last, after VDD and VDDQ are stable.
  • Use a minimum of 2-3 decoupling capacitors (e.g., 0.1 uF, 1 uF, and 10 uF) for each power supply pin. Place the capacitors as close to the device as possible. Use a low-ESR capacitor (e.g., X5R or X7R) for the 0.1 uF capacitor.

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