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NST65010MW6T1G - onsemi

Description: Current Gain Matching to 10%; Base−Emitter Voltage Matched to ≤ 2 mV; Drop−In Replacement for Standard Device; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

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NST65010MW6T1G - onsemi - PCB symbol
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PCB Footprints
NST65010MW6T1G - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - sot-363
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3D Models
NST65010MW6T1G - onsemi - 3D model - SOT23 (6-Pin) - sot-363
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NST65010MW6T1G Details

  • Manufacturer Part Number:

    NST65010MW6T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-88-6 / SC-70-6 / SOT-363-6

  • Manufacturer Package Code:

    419B-02

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Base Capacitance-Max:

    4.5 pF

  • Collector-Emitter Voltage-Max:

    65 V

  • Configuration:

    SEPARATE, 2 ELEMENTS

  • DC Current Gain-Min (hFE):

    220

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.38 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    100 MHz

  • VCEsat-Max:

    0.65 V

NST65010MW6T1G Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. A minimum of 2oz copper thickness is recommended. Additionally, vias should be placed under the package to connect the thermal pad to the copper area.
  • Ensure that the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C. Implement a thermal management system to keep the junction temperature below 125°C. Use a heat sink or a thermal interface material to improve heat dissipation.
  • The NST65010MW6T1G has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that the device is stored in an ESD-protected environment.
  • Yes, the NST65010MW6T1G is qualified for automotive and high-reliability applications. It meets the requirements of AEC-Q100 and is manufactured using a process that is compliant with IATF 16949.
  • The recommended soldering conditions are: peak temperature of 260°C, soldering time of 10-30 seconds, and a maximum of 3 reflows. Use a solder with a melting point of 217°C or higher.

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NST65010MW6T1G Overview

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