Part Image

NST847BDP6T5G - onsemi

Description: hFE, 200-450; Low VCE(sat), <0.25 V; Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; This is a Pb-Free Device; NPN General Purpose Transistor

Download NST847BDP6T5G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
NST847BDP6T5G - onsemi PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - SOT-963
click to zoom
3D Models
NST847BDP6T5G - onsemi  - 3D model - SO Transistor Flat Lead - SOT-963
click to zoom

NST847BDP6T5G Details

  • Manufacturer Part Number:

    NST847BDP6T5G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-963 1x1, 0.35P

  • Package Description:

    LEAD FREE, CASE 527AD-01, 6 PIN

  • Pin Count:

    6

  • Manufacturer Package Code:

    527AD

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    45 V

  • Configuration:

    SEPARATE, 2 ELEMENTS

  • DC Current Gain-Min (hFE):

    200

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.42 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    100 MHz

NST847BDP6T5G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure that the device is operated within the recommended temperature range (–40°C to 150°C). Use a heat sink or thermal pad to maintain a safe junction temperature (Tj) below 150°C.
  • A 10nF to 100nF input capacitance is recommended to filter out high-frequency noise and ensure stable operation.
  • Use ESD protection devices such as TVS diodes or ESD arrays at the input and output pins. Handle the device with an anti-static wrist strap or mat, and store it in an anti-static bag.
  • A 10uF to 100uF output capacitance is recommended to filter out high-frequency noise and ensure stable output voltage.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

NST847BDP6T5G Overview

Use the download button to access the NST847BDP6T5G schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like NST84, or try a keyword search, such as Small Signal Bipolar Transistors

Parts related to NST847BDP6T5G

Showing 0 results