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NSV2SC5658M3T5G - onsemi

Description: High hFE, 210460 (typical); Low VCE(sat), < 0.5 V; Available in 8 mm, 7-inch/3000 Unit Tape and Reel; This is a PbFree Device

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NSV2SC5658M3T5G - onsemi PCB footprint - Other - Other - SOT−723 CASE 631AA−01 ISSUE D_1
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NSV2SC5658M3T5G - onsemi  - 3D model - Other - SOT−723 CASE 631AA−01 ISSUE D_1
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NSV2SC5658M3T5G Details

  • Manufacturer Part Number:

    NSV2SC5658M3T5G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOT-723-3

  • Package Description:

    SOT-723, 3 PIN

  • Manufacturer Package Code:

    631AA

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    0.15 A

  • Collector-Base Capacitance-Max:

    2 pF

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    120

  • JESD-30 Code:

    R-PDSO-F3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.26 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    180 MHz

  • VCEsat-Max:

    0.4 V

NSV2SC5658M3T5G Frequently Asked Questions (FAQs)

  • For optimal performance, it's recommended to follow the PCB layout guidelines provided in the onsemi application note AND9405/D, which includes recommendations for thermal management, such as using a thermal pad and vias to dissipate heat.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, including the maximum junction temperature (Tj) of 150°C. Additionally, consider using thermal protection circuits and heat sinks to prevent overheating.
  • The NSV2SC5658M3T5G has built-in ESD protection, but it's still important to follow standard ESD handling precautions, such as using an ESD wrist strap, mat, or workstation, and storing the devices in anti-static packaging.
  • The NSV2SC5658M3T5G is not specifically designed for radiation-hardened or high-reliability applications. If you need a radiation-hardened or high-reliability device, consider using a different part from onsemi's radiation-hardened or high-reliability product lines.
  • Follow the recommended soldering and assembly techniques outlined in the onsemi application note AND8193/D, which includes guidelines for reflow soldering, wave soldering, and manual assembly.

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NSV2SC5658M3T5G Overview

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