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NSV60200LT1G - onsemi

Description: High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta); NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable

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NSV60200LT1G - onsemi - PCB symbol
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PCB Footprints
NSV60200LT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT−23 (TO−236) 2.90x1.30x1.00 1.90P CASE 318 ISSUE AU
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3D Models
NSV60200LT1G - onsemi - 3D model - SOT23 (3-Pin) - SOT−23 (TO−236) 2.90x1.30x1.00 1.90P CASE 318 ISSUE AU
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NSV60200LT1G Details

  • Manufacturer Part Number:

    NSV60200LT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 3 LEAD

  • Package Description:

    SOT-23, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Collector Current-Max (IC):

    2 A

  • Collector-Base Capacitance-Max:

    62 pF

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    100

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.54 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    100 MHz

  • Turn-off Time-Max (toff):

    530 ns

  • Turn-on Time-Max (ton):

    180 ns

  • VCEsat-Max:

    0.27 V

NSV60200LT1G Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. A minimum of 2oz copper thickness is recommended. Additionally, vias should be placed under the package to connect the thermal pad to the copper area.
  • Ensure that the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C. Implement a thermal management system, such as a heat sink or fan, to keep the junction temperature below 125°C. Monitor the device's thermal performance and adjust the system design as needed.
  • The NSV60200LT1G has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that the device is stored in an ESD-protected environment.
  • Yes, the NSV60200LT1G is qualified for automotive and high-reliability applications. It meets the requirements of AEC-Q101 and is manufactured using a process that is compliant with IATF 16949. However, additional testing and validation may be required for specific applications.
  • Use a systematic approach to troubleshoot issues. Check the power supply voltage, input signals, and output loads. Verify that the device is operated within the recommended operating conditions. Use oscilloscopes or logic analyzers to monitor the signals and identify the root cause of the issue.

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NSV60200LT1G Overview

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