NSV60 Model Download Search Results
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NSV60201LT1G
onsemi
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1 | High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta); NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable | SOT23 (3-Pin) | NSV60201LT1G |
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NSV60600MZ4T1G
onsemi
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1 | Low Collector-Emitter Saturation Voltage; High DC Current Gain; High Current-Gain Bandwidth Product; Superior gain linearity; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant | SOT223 (3-Pin) | NSV60600MZ4T1G |
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NSV60601MZ4T1G
onsemi
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1 | Low Collector-Emitter Saturation Voltage; High DC Current Gain; High Current-Gain Bandwidth Product; Superior gain linearity; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant | SOT223 (3-Pin) | NSV60601MZ4T1G |
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NSV60101DMTWTBG
onsemi
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1 | NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; NSV60101DMTWTBG - Wettable Flanks Packaged Device; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant; 1A IDC, 2A ICM; Low VCE(sat): 0.115V @ 1A IC, IC/IB= 10; Beta of 180 @ 1ADC, VCE = 2V | Other | NSV60101DMTWTBG |
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NSV60200LT1G
onsemi
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1 | High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta); NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable | SOT23 (3-Pin) | NSV60200LT1G |
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NSV60600MZ4T3G
onsemi
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1 | Low Collector-Emitter Saturation Voltage; High DC Current Gain; High Current-Gain Bandwidth Product; Superior gain linearity; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant | SOT223 (3-Pin) | NSV60600MZ4T3G |
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NSV60601MZ4T3G
onsemi
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1 | Low Collector-Emitter Saturation Voltage; High DC Current Gain; High Current-Gain Bandwidth Product; Superior gain linearity; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant | SOT223 (3-Pin) | NSV60601MZ4T3G |
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NSV60200SMTWTBG
onsemi
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1 | Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon | NSV60200SMTWTBG |
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NSV60101DMR6T2G
onsemi
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1 | Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon | NSV60101DMR6T2G |
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NSV60100DMTWTBG
onsemi
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1 | Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 6 Pin | NSV60100DMTWTBG |
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NSV60101DMR6T1G
onsemi
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1 | Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon | NSV60101DMR6T1G |
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NSV60200DMTWTBG
onsemi
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1 | Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon | NSV60200DMTWTBG |
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NSV60201SMTWTBG
onsemi
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1 | Single 60V 2A Low VCE(sat) NPN Transistor in WDFN6 AEC-Q101.revD Qualified - Wettable Flanks, WDFN-6, 3000-REEL, Automotive Qualified | NSV60201SMTWTBG |
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