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NSV60101DMTWTBG - onsemi

Description: NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; NSV60101DMTWTBG - Wettable Flanks Packaged Device; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant; 1A IDC, 2A ICM; Low VCE(sat): 0.115V @ 1A IC, IC/IB= 10; Beta of 180 @ 1ADC, VCE = 2V

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PCB Footprints
NSV60101DMTWTBG - onsemi PCB footprint - Other - Other - NSV60101DMTWTBG-2
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NSV60101DMTWTBG - onsemi  - 3D model - Other - NSV60101DMTWTBG-2
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NSV60101DMTWTBG Details

  • Manufacturer Part Number:

    NSV60101DMTWTBG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WDFN-6

  • Package Description:

    WDFN-6

  • Manufacturer Package Code:

    506AN

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.75

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    1 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SEPARATE, 2 ELEMENTS

  • DC Current Gain-Min (hFE):

    35

  • JESD-30 Code:

    S-PDSO-N6

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation Ambient-Max:

    2.27 W

  • Power Dissipation-Max (Abs):

    2.27 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    180 MHz

  • VCEsat-Max:

    0.2 V

NSV60101DMTWTBG Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the NSV60101DMTWTBG is a standard SOT-23 package with a 1.5mm x 1.5mm pad size, with a thermal pad connected to the drain pin.
  • Ensure proper thermal management by providing a sufficient heat sink, using thermal interface material, and keeping the device away from heat sources. The maximum junction temperature (Tj) is 150°C.
  • The maximum SOA for the NSV60101DMTWTBG is defined by the boundaries of voltage, current, and temperature. Refer to the datasheet's SOA graph to ensure operation within the safe region.
  • Yes, the NSV60101DMTWTBG is suitable for high-frequency switching applications due to its low gate charge (Qg) and low output capacitance (Coss). However, ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
  • Handle the device with ESD-protective equipment, and ensure the PCB design includes ESD protection circuits, such as TVS diodes or ESD-protection ICs, to prevent damage from static electricity.

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NSV60101DMTWTBG Overview

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