Part Image

NSVBC857CWT1G - onsemi

Description: Device Marking: BC856AWT1 = 3A BC856BWT1 = 3B BC857AWT1 = 3E BC857BWT1 = 3F BC858AWT1 = 3J BC858BWT1 = 3K BC858CWT1 = 3L; Pb-Free Packages are Available; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

Download NSVBC857CWT1G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
NSVBC857CWT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SC-70 (SOT-323) CASE419-04 ISSUE N
click to zoom
3D Models
NSVBC857CWT1G - onsemi  - 3D model - SOT23 (3-Pin) - SC-70 (SOT-323) CASE419-04 ISSUE N
click to zoom

NSVBC857CWT1G Details

  • Manufacturer Part Number:

    NSVBC857CWT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-70-3 / SOT-323-3

  • Manufacturer Package Code:

    419-04

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Base Capacitance-Max:

    4.5 pF

  • Collector-Emitter Voltage-Max:

    45 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    420

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.15 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    100 MHz

  • VCEsat-Max:

    0.65 V

NSVBC857CWT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power dissipation at high temperatures.
  • The maximum allowed voltage on the input pins is 5.5V, which is the absolute maximum rating. However, for reliable operation, it's recommended to keep the input voltage below 5V.
  • Use ESD protection devices such as TVS diodes or ESD arrays on the input lines. Also, follow proper handling and storage procedures to prevent ESD damage.
  • Power up the device in the following sequence: VCC, then VIN, and finally the input signals. This ensures proper device initialization and prevents latch-up.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

NSVBC857CWT1G Overview

Use the download button to access the NSVBC857CWT1G schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like NSVBC, or try a keyword search, such as Small Signal Bipolar Transistors

Parts related to NSVBC857CWT1G

Showing 0 results