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NSVBC858AWT1G - onsemi

Description: Device Marking: BC856AWT1 = 3A BC856BWT1 = 3B BC857AWT1 = 3E BC857BWT1 = 3F BC858AWT1 = 3J BC858BWT1 = 3K BC858CWT1 = 3L; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

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PCB Footprints
NSVBC858AWT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SC-70 (SOT-323) CASE419-04
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NSVBC858AWT1G - onsemi  - 3D model - SOT23 (3-Pin) - SC-70 (SOT-323) CASE419-04
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NSVBC858AWT1G Details

  • Manufacturer Part Number:

    NSVBC858AWT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-70-3 / SOT-323-3

  • Package Description:

    SC-70, SOT-323, 3 PIN

  • Manufacturer Package Code:

    419-04

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Base Capacitance-Max:

    4.5 pF

  • Collector-Emitter Voltage-Max:

    30 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    125

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.15 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    100 MHz

  • VCEsat-Max:

    0.65 V

NSVBC858AWT1G Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing thermal vias under the device, using a solid ground plane, and keeping the thermal path as short as possible. It's also recommended to use a thermal pad on the bottom of the device.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, use a suitable heat sink, and implement thermal management techniques such as thermal throttling or shutdown. Additionally, consider using a device with a higher temperature rating or a different package type.
  • Exceeding the maximum junction temperature (Tj) rating can lead to reduced device lifespan, increased thermal resistance, and potentially even device failure. It's crucial to ensure that the device operates within the recommended temperature range to maintain reliability and performance.
  • To handle ESD protection for the NSVBC858AWT1G, it's recommended to follow proper handling and storage procedures, use ESD-protective packaging, and implement ESD protection circuits or devices in the system design. Additionally, consider using a device with built-in ESD protection or a different package type with enhanced ESD protection.
  • The recommended soldering and assembly techniques for the NSVBC858AWT1G involve using a soldering iron with a temperature range of 250°C to 260°C, a soldering time of 3-5 seconds, and a peak temperature of 260°C. It's also essential to follow the recommended PCB layout, use a suitable solder paste, and implement a reflow soldering process.

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