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NSVDTC123JM3T5G - onsemi

Description: Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

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NSVDTC123JM3T5G Details

  • Manufacturer Part Number:

    NSVDTC123JM3T5G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-723-3

  • Manufacturer Package Code:

    631AA

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    BUILT IN BIAS RESISTANCE RATIO IS 21

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    80

  • JESD-30 Code:

    R-PDSO-F3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NSVDTC123JM3T5G Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the package, connecting it to a solid copper plane on the PCB, and ensuring good thermal conduction to the surrounding environment. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, provide adequate heat sinking, and consider derating the device's power handling capabilities. Additionally, ensure that the PCB and surrounding components are rated for the expected operating temperatures.
  • The NSVDTC123JM3T5G has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that the device is handled in a static-safe environment.
  • Yes, the NSVDTC123JM3T5G is suitable for high-frequency switching applications. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the PCB layout is optimized for high-frequency operation.
  • The optimal gate resistor value depends on the specific application requirements, such as switching frequency, voltage, and current. A general guideline is to start with a value between 10Ω and 100Ω and adjust based on the device's switching characteristics and the desired performance.

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NSVDTC123JM3T5G Overview

Use the download button to access the NSVDTC123JM3T5G 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like NSVDT, or try a keyword search, such as Small Signal Bipolar Transistors

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