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NSVIMD10AMT1G - onsemi

Description: Trans Digital BJT NPN/PNP 50V 500mA 285mW Automotive 6-Pin SC-74R T/R

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NSVIMD10AMT1G - onsemi - PCB symbol
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PCB Footprints
NSVIMD10AMT1G - onsemi PCB footprint - Other - Other - SC−74R CASE 318AA−01 ISSUE B
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3D Models
NSVIMD10AMT1G - onsemi - 3D model - Other - SC−74R CASE 318AA−01 ISSUE B
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NSVIMD10AMT1G Details

  • Manufacturer Part Number:

    NSVIMD10AMT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-74R-6

  • Package Description:

    SC-74R, 6 PIN

  • Manufacturer Package Code:

    318AA

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Collector Current-Max (IC):

    0.5 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    100

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN AND PNP

  • Power Dissipation-Max (Abs):

    0.285 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

  • VCEsat-Max:

    0.3 V

NSVIMD10AMT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Implement a robust thermal management system, including a heat sink and thermal interface material. Ensure good airflow and avoid hot spots. Monitor junction temperature (Tj) and adjust the system design accordingly.
  • Monitor the device's junction temperature (Tj), voltage (Vds), current (Ids), and power dissipation (Pd). Implement over-temperature protection (OTP) and over-current protection (OCP) mechanisms.
  • Use a gate driver with a high current capability (>1A) and a low output impedance. Ensure a short gate resistor (<10 ohms) and a low-inductance layout. Optimize the gate voltage (Vgs) and rise/fall times for efficient switching.
  • Implement ESD protection diodes (e.g., TVS or ESD arrays) on the drain and source pins. Use a low-capacitance, high-voltage ESD protection device. Ensure a robust PCB layout with a solid ground plane and minimal signal routing.

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NSVIMD10AMT1G Overview

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