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NSVMMUN2212LT1G - onsemi

Description: Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

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NSVMMUN2212LT1G - onsemi - PCB symbol
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PCB Footprints
NSVMMUN2212LT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318-08 ISSUE AS
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3D Models
NSVMMUN2212LT1G - onsemi - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318-08 ISSUE AS
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NSVMMUN2212LT1G Details

  • Manufacturer Part Number:

    NSVMMUN2212LT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 3 LEAD

  • Pin Count:

    3

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Collector Current-Max (IC):

    0.1 A

  • DC Current Gain-Min (hFE):

    60

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.4 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NSVMMUN2212LT1G Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. A minimum of 2oz copper thickness is recommended. Additionally, vias should be placed under the package to connect the thermal pad to the copper area.
  • The device requires a stable voltage supply and a proper biasing circuit to ensure optimal performance. A voltage regulator or a low-dropout regulator (LDO) should be used to regulate the voltage supply. The biasing circuit should be designed to provide a stable voltage and current to the device.
  • The device is sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Handling precautions include using an ESD wrist strap or mat, storing the device in an anti-static bag, and avoiding touching the device's pins or leads.
  • The optimal gate resistance value depends on the specific application and the required switching frequency. A general guideline is to use a gate resistance value between 10 ohms and 100 ohms. However, the optimal value may need to be determined through experimentation and simulation.
  • For high-power applications, thermal management is critical to prevent overheating and ensure reliable operation. This includes using a heat sink, thermal interface material, and ensuring good airflow around the device. The device's thermal pad should be connected to a heat sink or a large copper area on the PCB.

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NSVMMUN2212LT1G Overview

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