Description:Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant
HALOGEN FREE AND ROHS COMPLIANT, 419-04, SC-70, 3 PIN
Pin Count:
3
Manufacturer Package Code:
419-04
Country Of Origin:
Mainland China
ECCN Code:
EAR99
Factory Lead Time:
10 Weeks
Manufacturer:
onsemi
YTEOL:
7
Additional Feature:
BUILT IN BIAS RESISTANCE RATIO IS 1
Collector Current-Max (IC):
0.1 A
Collector-Emitter Voltage-Max:
50 V
Configuration:
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE):
8
JESD-30 Code:
R-PDSO-G3
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
3
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
PNP
Power Dissipation-Max (Abs):
0.31 W
Reference Standard:
AEC-Q101
Surface Mount:
YES
Terminal Finish:
Matte Tin (Sn) - annealed
Terminal Form:
GULL WING
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
30
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
NSVMUN5131T1G Frequently Asked Questions (FAQs)
A good PCB layout for the NSVMUN5131T1G should include a solid ground plane, wide copper traces for power and ground, and a thermal relief pattern under the device. A minimum of 2oz copper thickness is recommended. Additionally, placing vias under the device can help to dissipate heat more efficiently.
To ensure reliable operation at high temperatures, it's essential to follow proper thermal design and layout guidelines. This includes providing adequate heat sinking, using a thermal interface material (TIM) with a high thermal conductivity, and ensuring good airflow around the device. Additionally, derating the device's power dissipation according to the temperature derating curve in the datasheet is crucial.
The recommended soldering conditions for the NSVMUN5131T1G are: peak temperature of 260°C, soldering time of 10-30 seconds, and a soldering temperature profile that follows the JEDEC J-STD-020D standard. It's also important to use a solder with a high melting point and a flux that is compatible with the device's package.
To handle ESD protection for the NSVMUN5131T1G, it's recommended to follow proper ESD handling procedures during assembly and testing. This includes using ESD-safe materials, grounding personnel and equipment, and using ESD protection devices such as TVS diodes or ESD suppressors. Additionally, the device itself has built-in ESD protection, but it's still important to follow proper handling procedures to prevent damage.
Using a different package type or variant of the NSVMUN5131T1G may affect the device's thermal performance, power dissipation, and electrical characteristics. It's essential to consult the datasheet and application notes for the specific package type or variant being used to ensure proper design and operation. Additionally, onsemi's support team can provide guidance on package-specific considerations.
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NSVMUN5131T1G Overview
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