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NSVMUN5137DW1T1G - onsemi

Description: Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

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PCB Footprints
NSVMUN5137DW1T1G - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - 1.80*1.15
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NSVMUN5137DW1T1G - onsemi  - 3D model - SOT23 (6-Pin) - 1.80*1.15
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NSVMUN5137DW1T1G Details

  • Manufacturer Part Number:

    NSVMUN5137DW1T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-88/SC70-6/SOT-363 6 LEAD

  • Manufacturer Package Code:

    419B-02

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    BUILT IN BIAS RESISTOR RATIO IS 0.468

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    80

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.385 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • VCEsat-Max:

    0.25 V

NSVMUN5137DW1T1G Frequently Asked Questions (FAQs)

  • The recommended PCB layout involves placing the device near the input capacitors, using a solid ground plane, and minimizing trace lengths. For thermal management, a heat sink or thermal pad is recommended, with a thermal resistance of <1°C/W. Consult onsemi's application notes for more details.
  • To ensure EMC, follow onsemi's guidelines for PCB layout, use a shielded enclosure, and add EMI filters or chokes as needed. Additionally, consider using a common-mode choke and a differential-mode filter to reduce emissions.
  • The device can withstand voltage stresses up to 1.5 times the maximum rated voltage for a short duration (<100 ms). However, it's recommended to limit voltage stress to 1.2 times the maximum rated voltage to ensure reliability and prevent damage.
  • Use onsemi's recommended debugging tools, such as a oscilloscope, voltage probes, and current probes. Analyze the device's input and output waveforms, and check for proper voltage and current levels. Consult onsemi's application notes and technical support resources for guidance.
  • The NSVMUN5137DW1T1G has a high reliability rating, with an MTBF of >100 million hours at 40°C ambient temperature. However, the actual MTBF may vary depending on the application, operating conditions, and quality of the PCB assembly.

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